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STMicroelectronics STD70NH02LT4 — Discrete Semiconductors

STD70NH02LT4 ST N-Channel MOSFET, 24V 60A, 8mOhm Rds(on)

MPNSTD70NH02LT4
Obsolete

STMicroelectronics STripFET™ II, STD70NH02LT4, N-Channel MOSFET, 24 V Vdss, 60 A Id, 8 mOhm Rds(on) at 10 V, DPAK, -55°C to 175°C.

$0.5101Ref. price · indicative, final on quote
STMicroelectronics STD70NH02LT4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD70NH02LT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2050 pF @ 25 V

Product details

This part is listed as Obsolete. If you are repairing a board that has a blown STD70NH02LT4 — and the scorch mark on the DPAK tells you exactly which part died — you are looking at the surplus/broker channel for a genuine pull or new-old-stock.

The STD70NH02LT4 comes in a TO-252-3 DPAK (DPak, 2 leads plus tab). That tab is the drain — the PCB copper area underneath it is part of the thermal path, so the board layout needs a solid copper pour and enough vias to get the heat into the inner layers.

Frequently asked questions

What is the Rds(on) of STD70NH02LT4?

The maximum on-resistance is 8 mOhm at a drain current of 30 A and a gate-source voltage of 10 V. At lower gate drive (5 V) the Rds(on) will be higher — the datasheet typical curve is needed to estimate the value at 5 V, but the 8 mOhm figure is the headline spec for a 10 V driven design.