25V N-Channel power MOSFET in DPAK — STripFET™ V generation
It delivers a continuous drain current of 48A at 25°C case temperature and features a maximum on-resistance of 7.1mΩ at 24A and 10V gate drive.
The 7.1mΩ maximum Rds(on) at 10V gate drive is the headline efficiency spec: at 24A load, conduction loss stays under 4W, which the DPAK's exposed pad can sink with proper thermal vias. The drive voltage range (5V to 10V for rated Rds(on)) means a 5V logic-level gate signal will work, but the on-resistance roughly doubles below 10V — the design should budget the higher loss if using a 5V rail. The 8nC gate charge keeps switching losses low at moderate frequencies; the 1300pF input capacitance is a light load for a gate driver, so a standard totem-pole or driver IC handles it without excessive cross-conduction.
Engineers qualifying a new design should consider a pin-compatible N-channel MOSFET in the same voltage and current class, such as the STD70N2LH5's own STripFET™ V family siblings, though no direct replacement is documented here.
