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STMicroelectronics STD70N03L-1 — Discrete Semiconductors

STD70N03L-1 ST N-Channel MOSFET, 30V 70A, TO-251

MPNSTD70N03L-1
Obsolete

STMicroelectronics STD70N03L-1 N-Channel MOSFET, STripFET™ III, 30V Vdss, 70A Id, 7.3mOhm Rds(on), TO-251-3 (I-PAK), Through Hole, Tube.

STMicroelectronics STD70N03L-1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD70N03L-1 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs7.3mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V

Product details

The STD70N03L-1: The gate threshold voltage is 1 V max at 250 µA, and the device is driven with 5 V or 10 V logic — the 5 V drive is sufficient to achieve the rated Rds(on) minimum.

Switching performance and gate drive

Total gate charge (Qg) is 21 nC at 5 V gate drive — this low charge enables fast switching in DC-DC converters and load switches, keeping gate-drive losses minimal at moderate frequencies. Input capacitance (Ciss) is 2200 pF at 25 V drain bias — the switching speed is limited by the gate-drive current available to charge this capacitance, so a driver capable of sourcing at least 1 A is recommended for sub-100 ns rise times.

Sourced through independent distribution channels against an RFQ.

Frequently asked questions

What is the Rds(on) of STD70N03L-1 at 10 V gate drive?

Maximum Rds(on) is 7.3 mOhm at 35 A drain current and 10 V gate drive. The drive voltage range is 5 V to 10 V; the 5 V drive achieves the minimum Rds(on) value.