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STMicroelectronics STD70N03L — Discrete Semiconductors

STD70N03L STMicroelectronics N-Channel MOSFET, 30V, 70A

MPNSTD70N03L
Obsolete

STMicroelectronics STripFET™ III N-Channel MOSFET, STD70N03L, 30V Vdss, 70A Id, 7.3mOhm Rds(on) at 10V, 21nC gate charge, DPAK surface-mount package, -55°C to 175°C junction temperature.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD70N03L specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs7.3mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V

Product details

7.3 mOhm Rds(on) and gate drive considerations

For logic-level drive at 5 V, expect higher on-resistance than the 10 V rating; the datasheet's typical Rds(on) curve should be consulted for the actual value at the intended gate voltage.

Frequently asked questions

What is the Rds(on) of STD70N03L?

The maximum Rds(on) is 7.3 mOhm at 35 A drain current and 10 V gate drive.