7.3 mOhm Rds(on) and gate drive considerations
For logic-level drive at 5 V, expect higher on-resistance than the 10 V rating; the datasheet's typical Rds(on) curve should be consulted for the actual value at the intended gate voltage.

STMicroelectronics STripFET™ III N-Channel MOSFET, STD70N03L, 30V Vdss, 70A Id, 7.3mOhm Rds(on) at 10V, 21nC gate charge, DPAK surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 7.3mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 2200 pF @ 25 V |
For logic-level drive at 5 V, expect higher on-resistance than the 10 V rating; the datasheet's typical Rds(on) curve should be consulted for the actual value at the intended gate voltage.
The maximum Rds(on) is 7.3 mOhm at 35 A drain current and 10 V gate drive.