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STMicroelectronics STD4NS25T4 — Discrete Semiconductors

STD4NS25T4 N-Channel MOSFET, 250 V, 4 A, DPAK – Obsolete

MPNSTD4NS25T4
Obsolete

STMicroelectronics STD4NS25T4, MESH OVERLAY™ N-Channel MOSFET, 250 V Vdss, 4 A Id, 1.1 Ohm Rds(on) @ 10 V, 27 nC Qg, DPAK (TO-252), 150°C junction.

$0.6700Ref. price · indicative, final on quote
STMicroelectronics STD4NS25T4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD4NS25T4 specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation50W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.1Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds355 pF @ 25 V

Product details

Obsolete – sourcing reality

For BOM lines that already specify this part, procurement must source through independent distribution or surplus channels. A direct pin-compatible replacement within the same ST MESH OVERLAY family is not listed, so any substitution requires a parametric cross-check against the 250 V, 4 A, 1.1 Ohm, DPAK footprint.

Gate drive and switching note

The drive voltage for minimum on-resistance is 10 V, with a maximum gate-source rating of ±20 V. For designs that already use the STD4NS25T4, the 4 V gate threshold at 250 µA is typical for a standard-threshold MOSFET – ensure the driver's output voltage exceeds 10 V to achieve the rated Rds(on).

Frequently asked questions

What is the equivalent of STD4NS25T4?

No official direct replacement or cross-reference is listed for the STD4NS25T4. Any substitute must be evaluated against the 250 V Vdss, 4 A Id, 1.1 Ohm Rds(on) at 10 V, and DPAK footprint. A parametric search for N-channel MOSFETs in the same voltage and current class is the practical route.