STMicroelectronics STD4NK60ZT4, N-Channel SuperMESH™ MOSFET, 600 V Vdss, 4 A Id, 2 Ohm Rds(on) @ 10 V, DPAK (TO-252), 26 nC Qg, 510 pF Ciss.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 2Ohm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 25 V |
The 26 nC gate charge and 510 pF input capacitance allow switching with a modest gate driver.
It is not yet fully discontinued, but ST has flagged it for phase-out — new designs should not use this order code.
The 26 nC gate charge at Vgs = 10 V and 510 pF input capacitance at Vds = 25 V define the switching loss envelope. The gate-drive power is under 26 mW.
It is still available through the broker channel for existing BOMs, but ST is phasing it out — a last-time buy window may be open. New designs should select a current-production 600 V SuperMESH MOSFET.