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STMicroelectronics STD4NK60Z-1 — Discrete Semiconductors

STD4NK60Z-1 N-Channel MOSFET, 600V, 4A, 2 Ohm, SuperMESH

MPNSTD4NK60Z-1
NRND

STMicroelectronics SuperMESH™ STD4NK60Z-1, N-Channel MOSFET, 600V Vdss, 4A Id, 2 Ohm Rds(on) at 10V, 26 nC Qg, I-PAK (TO-251) through-hole package.

$0.8900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD4NK60Z-1 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds510 pF @ 25 V

Product details

600 V N-Channel MOSFET in a through-hole I-PAK

The STD4NK60Z-1: It is housed in a TO-251-3 (I-PAK) through-hole package with short leads, intended for automated or manual insertion on single-sided boards or heatsink-mount applications.

This means STMicroelectronics is not actively promoting the part for new projects, though existing production may still be supported for a limited window. For a new BOM, a pin-compatible alternative from the same SuperMESH family should be evaluated.

The 600 V drain-source voltage gives adequate derating for a universal-input AC-DC converter where the rectified DC bus can reach 375 V. Gate charge of 26 nC at 10 V is moderate, so a standard gate driver or a resistor from a PWM controller can drive it without excessive switching losses at frequencies up to 100 kHz. Input capacitance of 510 pF at 25 V is low enough that the driver does not need a totem-pole buffer in most designs.

Frequently asked questions

Is STD4NK60Z-1 obsolete or NRND?

It is not fully discontinued, but STMicroelectronics is not targeting it for new projects. For existing equipment repairs, it can still be sourced through independent distribution.

What is a suitable replacement or equivalent for STD4NK60Z-1?

A pin-compatible replacement would be another 600 V N-channel MOSFET in the I-PAK (TO-251) package from the same SuperMESH family, such as the STD4NK60Z (without the -1 suffix). Check the exact Rds(on) and gate charge to ensure the thermal and switching performance match your application.

Can STD4NK60Z-1 be used as a direct replacement for a failed MOSFET in existing equipment?

Yes, if the original part was a 600 V N-channel MOSFET in a TO-251 (I-PAK) package with similar Rds(on) and gate charge, the STD4NK60Z-1 is a drop-in replacement. Verify the gate drive voltage (10 V recommended) and the drain current rating (4 A) match the circuit's requirements.