STD4NK60Z-1

STMicroelectronics

STMicroelectronics SuperMESH™ STD4NK60Z-1, N-Channel MOSFET, 600V Vdss, 4A Id, 2 Ohm Rds(on) at 10V, 26 nC Qg, I-PAK (TO-251) through-hole package.

STMicroelectronics STD4NK60Z-1
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Technical specifications

STD4NK60Z-1 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds510 pF @ 25 V

Technical details

600 V N-Channel MOSFET in a through-hole I-PAK

The STD4NK60Z-1: It is housed in a TO-251-3 (I-PAK) through-hole package with short leads, intended for automated or manual insertion on single-sided boards or heatsink-mount applications.

This means STMicroelectronics is not actively promoting the part for new projects, though existing production may still be supported for a limited window. For a new BOM, a pin-compatible alternative from the same SuperMESH family should be evaluated.

The 600 V drain-source voltage gives adequate derating for a universal-input AC-DC converter where the rectified DC bus can reach 375 V. Gate charge of 26 nC at 10 V is moderate, so a standard gate driver or a resistor from a PWM controller can drive it without excessive switching losses at frequencies up to 100 kHz. Input capacitance of 510 pF at 25 V is low enough that the driver does not need a totem-pole buffer in most designs.

STD4NK60Z-1
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