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STMicroelectronics STD4NK50ZT4 — Discrete Semiconductors

STD4NK50ZT4 N-Channel MOSFET, 500V 3A, SuperMESH, NRND

MPNSTD4NK50ZT4
NRND

STMicroelectronics SuperMESH™ N-Channel MOSFET, STD4NK50ZT4, 500 V Vdss, 3 A continuous drain, 2.7 Ohm Rds(on) at 10 V gate drive, 12 nC gate charge, DPAK (TO-252) surface-mount package, -55 to 150 °C junction temperature.

$1.2800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD4NK50ZT4 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2.7Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds310 pF @ 25 V

Product details

500 V / 3 A N-channel MOSFET — SuperMESH™ series

On-resistance, gate charge, and switching performance

Maximum on-resistance is 2.7 Ohm at a drain current of 1.5 A with 10 V gate drive — this is the conduction loss figure for the power stage. The gate drive voltage is specified at 10 V for the rated Rds(on); a lower gate voltage will increase the on-resistance. Input capacitance Ciss is 310 pF at 25 V drain-source, consistent with the modest die size.

Thermal and environmental ratings

Maximum power dissipation is 45 W at the case temperature. Gate-source voltage is clamped at ±30 V maximum — a common zener-protected input that tolerates transient spikes on the gate drive line.

Package: DPAK (TO-252) surface-mount

The DPAK footprint is a standard power-package layout; the reeled format is Tape & Reel.

Lifecycle and sourcing — NRND status

For a BOM line already using this device, sourcing is available against an RFQ through the surplus and broker channel. Buyers evaluating new designs should select an active N-channel MOSFET with equivalent 500 V / 3 A ratings and a DPAK footprint.

Frequently asked questions

Is STD4NK50ZT4 obsolete?

It is not fully discontinued, but it is no longer recommended for new product designs. Sourcing for existing BOM lines remains available through independent distribution against an RFQ.

What is the replacement for STD4NK50ZT4?

For a new design, select an active N-channel MOSFET with a 500 V drain-source breakdown, 3 A continuous drain current, and 2.7 Ohm or lower on-resistance in a DPAK (TO-252) package. The gate drive requirement is 10 V.

What is the Rds(on) of STD4NK50ZT4?

The maximum on-resistance is 2.7 Ohm at a drain current of 1.5 A with a gate-source voltage of 10 V.