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STMicroelectronics STD4NK50ZD-1 — Discrete Semiconductors

STD4NK50ZD-1 N-Channel MOSFET, 500 V, 3 A, SuperMESH™

MPNSTD4NK50ZD-1
Obsolete

STMicroelectronics SuperMESH™ STD4NK50ZD-1, N-Channel MOSFET, 500 V Vdss, 3 A Id, 2.7 Ohm Rds(on) at 10 V, TO-251 (IPAK) through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD4NK50ZD-1 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2.7Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds310 pF @ 25 V

Product details

500 V, 3 A N-channel MOSFET — SuperMESH™ series

The device is housed in a through-hole TO-251-3 (IPAK) package, suited for high-voltage switching applications such as flyback converters, auxiliary power supplies, and offline SMPS topologies where a compact, low-capacitance switch is needed.

Obsolete — sourcing through independent distribution

The STD4NK50ZD-1 is marked obsolete by STMicroelectronics.

Key ratings for design margin

The 500 V drain-source rating provides a solid voltage margin for universal-input offline converters (typical 400 V bulk rail after rectification).

Frequently asked questions

What is the replacement for STD4NK50ZD-1?

For a functional replacement, look for an N-channel MOSFET in the same TO-251 (IPAK) package with a 500 V Vdss, 3 A Id rating, and similar gate charge and on-resistance. The SuperMESH series includes other voltage/current variants that may fit, but pin compatibility should be verified against the design.