STMicroelectronics SuperMESH™ STD4NK100Z, N-Channel MOSFET, 1000 V Vdss, 2.2 A Id, 6.8 Ohm Rds(on) at 10 V, DPAK, AEC-Q101, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.2A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 6.8Ohm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 601 pF @ 25 V |
The STD4NK100Z: The 1000 V drain-source breakdown voltage suits offline flyback, PFC, and auxiliary supply stages.
The DPAK (TO-252) package with an exposed tab — the drain connection — needs a proper copper area on the PCB to get the 90 W power dissipation rating.
Rds(on) is 6.8 Ohm max at 1.1 A with 10 V gate drive.
It's ROHS3 compliant.
No official replacement or successor is listed. The base product number is STD4NK100; the 'Z' suffix indicates the SuperMESH™ generation. For a drop-in alternative, check the STD4NK100 series variants with the same package and voltage class.
Yes — STD4NK100Z carries AEC-Q101 qualification, making it suitable for automotive-grade applications.