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STMicroelectronics STD4N90K5 — Discrete Semiconductors

STD4N90K5 MOSFET N-Ch 900V 3A DPAK STMicro MDmesh

MPNSTD4N90K5
Active

STMicroelectronics STD4N90K5, MDmesh™ N-Channel MOSFET, 900 V Vdss, 3 A Id, 2.1 Ohm Rds(on), DPAK (TO-252), Tape & Reel.

$1.9500Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD4N90K5 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2.1Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs5.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds173 pF @ 100 V

Product details

The STD4N90K5: These numbers set the drive current required at the switching frequency: a 100 kHz switching rate draws roughly 0.53 mA from the gate driver for charging alone, well within a standard driver's capability. The low Qg and Ciss make this device suitable for moderate-speed switching in flyback converters and auxiliary power supplies. The gate threshold voltage is 5 V maximum at 100 µA drain current, with a recommended drive voltage of 10 V for minimum on-resistance. The gate-source rating is ±30 V, giving headroom for overshoot in hard-switched topologies.

Active production — sourcing and compliance posture

The operating junction temperature range spans -55 °C to +150 °C, covering industrial and some automotive under-hood environments.

Frequently asked questions

What package options are available for STD4N90K5?

The supplier device package is DPAK.