STMicroelectronics
STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 525 V Vdss, 2.5 A continuous drain current, 2.6 Ohm Rds(on) at 1.25 A, 10 V, 2 nC gate charge, DPAK (TO-252) surface-mount package.
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 525 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 2.6Ohm @ 1.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 334 pF @ 100 V |
The STD4N52K3: The gate charge is 2 nC at 10 V. The DPAK (TO-252) surface-mount package fits compact PCB layouts where a 45 W power dissipation budget is adequate with proper thermal management.
Gate charge is 2 nC at 10 V. The recommended drive voltage for achieving the rated Rds(on) is 10 V.
Maximum junction temperature is 150°C, and the device is rated for 45 W power dissipation at the case.
