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STMicroelectronics STD45NF75T4 — Discrete Semiconductors

STD45NF75T4 N-Channel MOSFET, 75 V, 40 A, DPAK

MPNSTD45NF75T4
Active

STMicroelectronics STripFET™ II N-Channel MOSFET, STD45NF75T4, 75 V drain-source, 40 A continuous, 24 mOhm Rds(on), DPAK (TO-252) surface-mount package, Tape & Reel.

$1.9700Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD45NF75T4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1760 pF @ 25 V

Product details

DPAK footprint and thermal story

The STD45NF75T4 comes in the DPAK (TO-252) surface-mount package — a three-lead tabbed footprint that uses the board copper as the primary heatsink. The exposed tab is the drain, so the PCB pad area under the tab sets the junction-to-ambient thermal resistance; a 1-inch² copper pour on a 2-oz board typically keeps the tab temperature within 30 °C of ambient at the rated 125 W dissipation (Tc).

A gate driver sourcing 1 A charges the gate in roughly 80 ns, but the practical switching edge is slower because the Miller plateau extends the rise time. Input capacitance (Ciss) is 1760 pF at 25 V drain-source. This loads the driver output at the start of the switching transition; a 10 Ω series gate resistor slows the edge enough to control ringing without extending the switching loss significantly.

Temperature grade and operating margin

The junction temperature range is -55 °C to 175 °C — the full industrial temperature band plus margin for self-heating. At 40 A continuous, the junction rises above the case temperature by the product of Rds(on) and the square of the current, times the thermal resistance junction-to-case. At 125 °C junction, Rds(on) roughly doubles from the 25 °C value, so the available continuous current derates.