The STD45N10F7: It is rated for a drain-source voltage of 100 V and a continuous drain current of 45 A at 25 °C case temperature, with a maximum power dissipation of 60 W.
18 mOhm on-resistance — conduction loss floor
The maximum on-resistance is 18 mOhm at a gate drive of 10 V and a drain current of 22.5 A. That figure sets the conduction-loss baseline for a given load current — at 22.5 A the I²R loss is roughly 9.1 W, which must be within the 60 W dissipation ceiling. The drive voltage for achieving the rated Rds(on) is 10 V, so a gate-driver supply of at least 10 V is needed to reach the specified performance.
The moderate capacitance keeps the switching node rise time manageable without excessive drive power.
175 °C junction — wider thermal margin
The operating junction temperature range extends from -55 °C to 175 °C, which is 25 °C higher than the typical 150 °C maximum for many power MOSFETs. That extra headroom matters in high-ambient environments such as under-hood automotive or sealed industrial enclosures, where the case temperature can push above 100 °C.