STMicroelectronics DeepGATE™ STripFET™ VI N-Channel MOSFET, 40 V Vdss, 44 A Id, 12.5 mOhm Rds(on), DPAK surface-mount, Tape & Reel.
| Parameter | Value |
|---|---|
| Series | DeepGATE™, STripFET™ VI |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 44A (Tc) |
| Power dissipation | 50W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 12.5mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1190 pF @ 25 V |
The STD44N4LF6: The -55 to 175 °C junction range covers under-hood automotive and industrial enclosures where ambient heat soaks the PCB — the Rds(on) doubles at 175 °C, so the 12.5 mOhm room-temperature figure should be derated by the typical 1.7× temperature coefficient for hot-operation loss estimates.
The STD80N3LL (30 V, 80 A, 5.2 mOhm) and STD80N4F6 (40 V, 80 A, 6 mOhm) share the same DPAK package and N-channel polarity, but their higher current rating and lower Rds(on) target different design points. The STD44N4LF6 is the cost-optimized 44 A option in the same footprint.