100 V, 50 A N-Channel in DPAK
The STD40NF10 is an N-channel power MOSFET from STMicroelectronics' STripFET™ II series, rated for 100 V drain-to-source and 50 A continuous drain current at 25 °C case temperature. The 28 mOhm maximum on-resistance at 25 A and 10 V gate drive defines the conduction loss floor for the load current. Housed in the DPAK (TO-252) surface-mount package, the exposed paddle on the underside carries the drain current and must be soldered to a copper plane for thermal management. The -55 °C to 175 °C junction range covers industrial and automotive under-hood environments where the board sees sustained high ambient temperatures.
Gate charge and switching profile
Total gate charge is 62 nC at 10 V gate drive. For a 100 kHz switching frequency, the average gate-drive current is roughly 6.2 mA — well within the capability of a standard gate-driver IC. The 2180 pF input capacitance at 25 V drain bias sets the drive impedance requirement; the driver must source and sink enough peak current to charge and discharge this capacitance within the desired dead-time window. The 4 V maximum gate threshold at 250 µA drain current means the device is fully enhanced with a standard 10 V gate drive, but the threshold is high enough to resist spurious turn-on from coupled noise on the gate trace in a noisy power stage layout.
Active production, ROHS3 compliant
The STD40NF10 carries an Active lifecycle status from STMicroelectronics and is ROHS3 compliant. The base product number STD40 identifies the family; the suffix codes differentiate packaging and reel options. For BOM planning, the part is sourced through authorized and independent distribution channels. Availability and current pricing are confirmed at RFQ against the required quantity.