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STMicroelectronics STD3NM60T4 — Discrete Semiconductors

STD3NM60T4 N-Channel MOSFET, 600 V, 3 A, MDmesh™

MPNSTD3NM60T4
Obsolete

STMicroelectronics STD3NM60T4, MDmesh™ N-Channel MOSFET, 600 V Vdss, 3 A Id, 1.5 Ω Rds(on), 14 nC Qg, DPAK (TO-252-3) package.

$1.5300Ref. price · indicative, final on quote
STMicroelectronics STD3NM60T4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD3NM60T4 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation42W (Tc)
Operating temperature-65°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds324 pF @ 25 V

Product details

The STMicroelectronics STD3NM60T4 is a 600 V N-channel power MOSFET built on the MDmesh™ technology, a multi-drain mesh architecture that reduces on-resistance while maintaining fast switching. Gate charge is 14 nC at 10 V. Input capacitance is 324 pF at 25 V.

Sourcing is limited to surplus inventory held by independent distributors and brokers. Each lot should be verified for date-code consistency and original ST marking — the DPAK body is small enough that re-marked or sanded parts are a known counterfeit risk in the 600 V MOSFET space. Any stock offered must trace back to a clean procurement chain; a decap and X-ray check on a sample from each date-code lot is prudent before committing a production BOM line.

DPAK footprint and thermal design

The STD3NM60T4 is supplied in the DPAK (TO-252-3) surface-mount package.

Frequently asked questions

Is the STD3NM60T4 still available via RFQ confirmation anywhere?

The STD3NM60T4 is obsolete and no longer in factory production. Each lot should be physically authenticated for genuine ST marking and date-code consistency before acceptance.

What is the replacement for the STD3NM60T4?

A functionally similar 600 V N-channel MOSFET in the same DPAK package from the MDmesh family may be selected by comparing Rds(on), gate charge, and current rating against the design's thermal budget. Because the part is obsolete, any replacement must be re-qualified on the board — the pinout is standard DPAK, but the gate threshold and switching characteristics differ across variants.

Can the STD3NM60T4 be used in a 48V or 600V application?

Yes. The 600 V drain-source voltage rating provides ample margin for a 48 V bus (typical flyback or boost stage) and is the correct voltage class for offline 600 V DC-rail switching in power supplies up to about 60 W. At 48 V the 3 A continuous drain current allows output power around 150 W in a single-switch topology, though the 42 W dissipation limit and the Rds(on) of 1.5 Ω will constrain the duty cycle and thermal design.