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STMicroelectronics STD3NM60N — Discrete Semiconductors

STD3NM60N N-Channel MOSFET, 600 V, 1.8 Ohm, DPAK

MPNSTD3NM60N
Active

STMicroelectronics STD3NM60N, MDmesh™ II series, N-Channel MOSFET, 600 V Vdss, 1.8 Ohm Rds(on) @ 1.65 A, 10 V, 9.5 nC gate charge, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.

$1.2300Ref. price · indicative, final on quote
STMicroelectronics STD3NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD3NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.3A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.8Ohm @ 1.65A, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds188 pF @ 50 V

Product details

600 V N-channel MDmesh™ II MOSFET in a DPAK

The STMicroelectronics STD3NM60N is an N-channel power MOSFET built on the MDmesh™ II technology, rated for a drain-to-source voltage of 600 V.

1.8 Ohm Rds(on) and 9.5 nC gate charge — switching loss budget

The 1.8 Ohm maximum on-resistance at a 1.65 A drain current and 10 V gate drive sets the conduction loss floor for a given load. For a 600 V rated part, this combination of Rds(on) and Qg points to a device optimised for moderate-frequency flyback, PFC boost, or auxiliary supply stages where switching losses need to stay contained.

Temperature range and junction limits

The base product number STD3 covers a family of voltage and current variants, which can simplify qualification across multiple power stages in a single BOM.

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