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STMicroelectronics STD3NM50T4 — Discrete Semiconductors

STD3NM50T4 N-Channel MOSFET, 550 V, 3 A, MDmesh

MPNSTD3NM50T4
Obsolete

STMicroelectronics STD3NM50T4, MDmesh™ N-Channel MOSFET, 550 V drain-source, 3 A continuous drain, 3 Ohm Rds(on) at 10 V, TO-252-3 (DPAK) surface-mount package.

STMicroelectronics STD3NM50T4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD3NM50T4 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage550 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation46W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 25 V

Product details

It comes in a TO-252-3 (DPAK) surface-mount package, which suits compact power supplies, auxiliary flyback converters, and PFC stages where board space is tight.

Obsolete — last-time-buy window is closed

ST no longer manufactures this device, and the last-time-buy window has passed. Any stock available in the independent channel is new-old-stock or surplus. For a production BOM line, a pin-compatible replacement within the same MDmesh family is the practical path — the STD3N50T4 (same TO-252 footprint, 500 V, similar gate charge) is a common cross-shop candidate, but verify the 500 V vs 550 V rating and Rds(on) differences against your derating requirements before substituting.

Gate drive and switching — 5.5 nC Qg keeps the driver small

The ±30 V gate-source maximum gives headroom for transient spikes, though the recommended drive voltage for rated Rds(on) is 10 V.

Independent distributors hold remaining inventory. For a BOM that cannot requalify a replacement, securing a date-code-verified lot from a reputable broker is the only path. If the design can accommodate a drop-in alternative, the STD3N50T4 or a later MDmesh M5/M6 series part in DPAK (e.g., 550 V, 3 A class) should be evaluated for fit.

Frequently asked questions

Is STD3NM50T4 obsolete?

Yes, the STD3NM50T4 carries an Obsolete lifecycle status. STMicroelectronics no longer manufactures this part, and the last-time-buy window has closed.

What is the direct replacement for STD3NM50T4?

There is no official successor listed for the STD3NM50T4. A common cross-shop candidate is the STD3N50T4 (same TO-252 DPAK footprint, 500 V drain-source), but you must verify the 500 V vs 550 V rating, Rds(on), and gate charge against your design margins before substituting.

What is the Rds(on) of STD3NM50T4 at 10 V Vgs?

The maximum on-resistance is 3 Ohm at 10 V gate drive, tested at 1.5 A drain current.

Can I replace STD3NM50T4 with STD3N50T4?

The STD3N50T4 is a similar N-channel MOSFET in the same TO-252 package, but it is rated at 500 V drain-source instead of 550 V. Verify the voltage derating, Rds(on), and gate charge in your circuit before using it as a drop-in replacement.