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STMicroelectronics STD3N95K5AG — Discrete Semiconductors

STD3N95K5AG N-Channel 950V MOSFET, Automotive Grade, DPAK

MPNSTD3N95K5AG
Active

STMicroelectronics STD3N95K5AG, N-Channel MOSFET, 950 V drain-source, 2 A continuous drain, 5 Ohm Rds(on) at 1 A / 10 V, DPAK (TO-252), AEC-Q101 qualified.

$1.8300Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD3N95K5AG specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs3.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds105 pF @ 100 V

Product details

Automotive qualification and the under-hood decision

For a BOM destined for a 48 V mild-hybrid DC-DC converter or an engine-cooling fan drive, the AEC-Q101 stamp is the baseline — commercial-grade parts do not survive the thermal shock profile.

Gate charge and drive compatibility

With a maximum gate charge of 3.4 nC at 10 V, the STD3N95K5AG presents a light load to the gate driver. The low input capacitance of 105 pF at 100 V drain-source further reduces the switching loss contribution from the Miller plateau.

Frequently asked questions

What does the Automotive grade on STD3N95K5AG mean for my design?

The Automotive grade together with AEC-Q101 qualification means this MOSFET has been screened for extended temperature cycling, high-temperature reverse bias, and humidity stress — requirements for under-hood and chassis-domain automotive electronics.