STD3N80K5

STMicroelectronics · SuperMESH5™ Series

STMicroelectronics SuperMESH5™ STD3N80K5, N-Channel MOSFET, 800V Vdss, 2.5A Id, 3.5 Ohm Rds(on) at 10V, 9.5 nC Qg, DPAK (TO-252) surface-mount package, -55°C to 150°C Tj.

STMicroelectronics STD3N80K5
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD3N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds130 pF @ 100 V

Technical details

STD3N80K5
[ALLOC] verified
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