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STMicroelectronics STD3N80K5 — Discrete Semiconductors

STD3N80K5 N-Channel MOSFET, 800V, 2.5A, DPAK

MPNSTD3N80K5
Active

STMicroelectronics SuperMESH5™ STD3N80K5, N-Channel MOSFET, 800V Vdss, 2.5A Id, 3.5 Ohm Rds(on) at 10V, 9.5 nC Qg, DPAK (TO-252) surface-mount package, -55°C to 150°C Tj.

$1.5300Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD3N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds130 pF @ 100 V

Product details

That 800 V ceiling puts it into the offline flyback, LED lighting, and auxiliary supply bracket — the kind of rail where you need margin above a 400 V DC bus without jumping to a bigger package. At 2.5 A the dissipation in the channel alone hits about 22 W before you add switching losses — the 60 W package limit at the case gives some headroom, but the real thermal limit depends on how much copper you put under the DPAK tab.

The ±30 V maximum gate-source rating gives plenty of margin for a 10 V or 12 V gate drive rail; just watch for ringing on long gate traces that could exceed that limit. The 5 V gate threshold at 100 µA is on the higher side, so a 5 V logic-level drive will not fully enhance it — plan for a 10 V gate drive to hit the rated Rds(on).

Frequently asked questions

What is the Rds(on) of STD3N80K5?

This is the figure to use for conduction loss calculations at the nominal operating point.