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STMicroelectronics STD3N65M6 — Discrete Semiconductors

STD3N65M6 N-Channel MOSFET, 650 V, 3.5 A, MDmesh M6

MPNSTD3N65M6
Active

STMicroelectronics STD3N65M6, N-Channel MOSFET, MDmesh™ M6 series, 650 V Vdss, 3.5 A Id, 1.5 Ohm Rds(on) at 10 V, 6 nC Qg, DPAK surface-mount package, -55°C to 150°C junction temperature.

$0.4805Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD3N65M6 specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)0V, 10V
Current - continuous drain (Id) @ 25°C3.5A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.75V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 1.75A, 10V
Gate charge (Qg) (Max) @ vgs6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 100 V

Product details

650 V N-channel in DPAK — MDmesh M6

The 6 nC typical gate charge keeps gate-drive losses low in hard-switched topologies. Packaged in a DPAK (TO-252) surface-mount outline, it suits automated assembly for flyback converters, PFC stages, and auxiliary power supplies in industrial and automotive environments.

For designs that need to minimise switching loss in a 100–200 kHz flyback, this part's combination of low Qg and 150 pF input capacitance gives a clean trade-off against higher-current devices.

Frequently asked questions

What is the Rds(on) of STD3N65M6?

The maximum on-resistance is 1.5 Ohm at a gate drive of 10 V and drain current of 1.75 A.

What is the closest pin-compatible alternative to STD3N65M6?

The base product number STD3N65 covers the same 650 V, 3.5 A class in DPAK. Within the MDmesh M6 series, parts with similar voltage and current ratings but different Rds(on) or gate charge may share the same footprint — verify the specific order code against your switching frequency and thermal budget.