Active N-channel MOSFET in DPAK for medium-voltage switching
The STD3N62K3 is an N-channel MOSFET from STMicroelectronics' SuperMESH3™ series, rated for 620 V drain-to-source and 2.7 A continuous drain current at 25 °C case temperature. Housed in a DPAK (TO-252) surface-mount package, it targets medium-voltage applications such as auxiliary power supplies, flyback converters, and lighting ballasts where the 620 V breakdown margin covers off-line rectified mains with headroom. The 150 °C maximum junction temperature allows operation in thermally constrained enclosures, provided the 45 W power dissipation at case temperature is not exceeded.
Parametric profile: gate charge and on-resistance trade-off
Maximum on-resistance is 2.5 Ohm at 1.4 A drain current with 10 V gate drive — the Rds(on) is specified at the drive voltage the part is designed for, so budget the gate drive rail accordingly. Gate charge totals 13 nC at 10 V, keeping the drive current modest at moderate switching frequencies; the input capacitance of 385 pF at 25 V drain-source sets the switching loss ceiling in hard-switched topologies. The 4.5 V gate threshold at 50 µA drain current means the device is fully enhanced with standard 10 V gate logic, but the threshold is high enough to resist spurious turn-on from coupled noise in a 12 V gate-drive rail.
Lifecycle and compliance status
The part is RoHS3 compliant (2011/65/EU + 2015/863), which covers the majority of commercial and industrial BOM requirements without a separate exemption review.