STMicroelectronics SuperMESH3™ STD3LN62K3 N-channel MOSFET, 620 V drain-source, 2.5 A continuous drain, 3 Ohm Rds(on) at 10 V, 17 nC gate charge, DPAK surface-mount package.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 620 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 3Ohm @ 1.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 386 pF @ 50 V |
This combination keeps both conduction and switching losses manageable in a 30–100 W flyback running at 65–100 kHz. The low input capacitance (386 pF at 50 V) further reduces the drive burden on the PWM controller's output stage.
STMicroelectronics lists the STD3LN62K3 as obsolete. Buyers should plan for a one-time last-time-buy or qualify a cross from the same SuperMESH3™ 620 V family.
No official replacement part number is listed by STMicroelectronics. A functionally similar device from the same SuperMESH3™ 620 V family (such as the STD3LN62K2) may be considered, but pin compatibility and parametric fit must be verified against the original design.