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STMicroelectronics STD38NH02LT4 — Discrete Semiconductors

STD38NH02LT4 N-Channel MOSFET, 24V 38A, 13.5mOhm Rds(on)

MPNSTD38NH02LT4
Obsolete

STMicroelectronics STD38NH02LT4, STripFET™ III N-Channel MOSFET, 24 V Vdss, 38 A Id, 13.5 mOhm Rds(on) at 10 V, DPAK package, -55°C to 175°C junction temperature.

$0.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD38NH02LT4 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1070 pF @ 25 V

Product details

24 V, 38 A N-channel in DPAK — STripFET™ III generation

The 13.5 mOhm maximum Rds(on) at 10 V gate drive is specified at 19 A, which gives a conduction loss of roughly 2.6 W at that current — a figure that must be checked against the 40 W package dissipation limit and the thermal impedance of the board. The gate charge is 24 nC at 10 V, a moderate value that keeps switching losses manageable for a 38 A rated device; the driver must supply this charge per switching cycle. The input capacitance is 1070 pF at 25 V drain-source, which influences the gate drive rise time and the switching speed.

Frequently asked questions

What is the Rds(on) of STD38NH02LT4?

The maximum Rds(on) is 13.5 mOhm at a drain current of 19 A with a 10 V gate-source voltage.

What package is STD38NH02LT4?

The STD38NH02LT4 is supplied in a DPAK (TO-252-3) surface-mount package, also designated as SC-63.