Skip to main content
Log in
STMicroelectronics STD37P3H6AG — Discrete Semiconductors

STD37P3H6AG P-Channel MOSFET, 30V, 49A, DPAK, AEC-Q101

MPNSTD37P3H6AG
Obsolete

STMicroelectronics STD37P3H6AG, Automotive AEC-Q101 STripFET™ H6 P-Channel MOSFET, 30V Vdss, 49A Id, 15mOhm Rds(on) @ 10V, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.

$1.9900Ref. price · indicative, final on quote
STMicroelectronics STD37P3H6AG datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD37P3H6AG specifications
ParameterValue
SeriesAutomotive, AEC-Q101, STripFET™ H6
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C49A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs30.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1630 pF @ 25 V

Product details

Gate drive is specified at 10 V for the minimum Rds(on); at lower gate voltages the on-resistance rises, so check the gate-charge curve if your driver swings 5 V or less.

DPAK package and thermal design

The DPAK (TO-252) surface-mount package has an exposed metal tab that carries most of the 60 W maximum power dissipation.

Lifecycle status: obsolete — sourcing reality

Designers evaluating a substitute should look for a P-Channel MOSFET in DPAK with 30 V Vdss, 49 A Id, and AEC-Q101 qualification, noting that the gate drive and Rds(on) characteristics will need to match the application's switching and thermal budget.

Frequently asked questions

Is STD37P3H6AG obsolete?

Yes, the STD37P3H6AG is listed as Obsolete. It is no longer manufactured by STMicroelectronics.

What is the replacement for STD37P3H6AG?

STMicroelectronics has not assigned a direct factory replacement under the STD37 base number. A functionally equivalent substitute would be a P-Channel MOSFET in DPAK with 30 V Vdss, 49 A Id rating, and AEC-Q101 qualification, but the gate drive and Rds(on) must be verified against the application's switching and thermal requirements.

Where can I buy STD37P3H6AG?

Submit an RFQ for current availability and pricing — each quote is confirmed at order time against the available inventory.

What is STD37P3H6AG's gate charge and input capacitance?

The maximum gate charge is 30.6 nC at 10 V gate drive. Maximum input capacitance is 1630 pF measured at 25 V drain-source. These figures drive the gate-driver sizing and switching loss calculation.