P-Channel power switch rated for 36 A continuous drain
The STMicroelectronics STD36P4LLF6 is a P-Channel MOSFET from the STripFET™ F6 series, designed for medium-voltage load switching and power management. The on-resistance is specified at 20.5 mΩ maximum when driven with 10 V on the gate, making it a fit for applications where conduction losses matter. The device is rated for a junction temperature up to 175 °C, which gives thermal headroom in compact designs.
Gate threshold voltage is 2.5 V maximum at 250 µA drain current, so the part turns on fully with standard 5 V logic but benefits from the full 10 V drive to reach the minimum Rds(on). Gate charge is 22 nC at 4.5 V, which keeps switching losses moderate in PWM applications. Input capacitance is 2850 pF at 25 V drain-source, a number to consider when sizing the gate driver for rise-time targets.
Maximum power dissipation is 60 W at case temperature, which assumes adequate PCB copper area and thermal vias under the tab to pull heat into the board.