STMicroelectronics STD36NH02L, STripFET™ III N-Channel MOSFET, 24 V drain-source, 30 A continuous drain, 14.5 mΩ Rds(on) at 10 V, DPAK surface-mount package.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 24 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 14.5mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 860 pF @ 15 V |
Gate drive voltage is flexible: the datasheet characterizes Rds(on) at both 5 V and 10 V, so a logic-level gate signal from a 5 V microcontroller output can still switch it, though the on-resistance will be higher than the 10 V figure.
Housed in a TO-252-3 (DPAK) surface-mount package with an exposed tab.
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