Skip to main content
Log in
STMicroelectronics STD35NF3LLT4 — Discrete Semiconductors

STD35NF3LLT4 N-Channel MOSFET, 30V, 35A, 19.5mΩ DPAK

MPNSTD35NF3LLT4
Obsolete

STMicroelectronics STripFET™ II series, STD35NF3LLT4, N-Channel MOSFET, 30V Vdss, 35A Id, 19.5mOhm Rds(on) at 10V, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.

$0.8700Ref. price · indicative, final on quote
STMicroelectronics STD35NF3LLT4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD35NF3LLT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs19.5mOhm @ 17.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 25 V

Product details

30 V, 35 A N-channel MOSFET in DPAK — STripFET™ II

At 17.5 A drain current, the voltage drop across the FET stays under 340 mV, keeping dissipation manageable. The low gate charge of 17 nC at 5 V means the gate driver doesn't need to push much current to switch the FET quickly — useful for designs where switching frequency is in the hundreds of kHz.

The DPAK (TO-252) footprint is a common surface-mount package for medium-power MOSFETs, with the tab soldered to the PCB pad for thermal management.

Frequently asked questions

What is the Rds(on) of STD35NF3LLT4?

It can also be driven at 4.5 V for logic-level applications, though the Rds(on) will be higher at the lower gate voltage.