Skip to main content
Log in
STMicroelectronics STD35N3LH5 — Discrete Semiconductors

STD35N3LH5 N-Channel MOSFET, 30V 35A DPAK, STripFET V

MPNSTD35N3LH5
Obsolete

STMicroelectronics STripFET™ V, N-Channel MOSFET, STD35N3LH5, 30V Vdss, 35A Id, 16mOhm Rds(on) @ 10V, 6nC Qg, DPAK (TO-252), -55°C~175°C.

$1.6200Ref. price · indicative, final on quote
STMicroelectronics STD35N3LH5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD35N3LH5 specifications
ParameterValue
SeriesSTripFET™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds725 pF @ 25 V

Product details

What this 30V N-channel MOSFET does in a switching circuit

The STMicroelectronics STD35N3LH5 is a 30 V, 35 A N-channel power MOSFET built on the STripFET™ V process technology. The 6 nC gate charge at 4.5 V means a simple 5 V logic gate or a low-cost gate driver IC can switch it fast without a separate gate-drive boost stage.

The 16 mOhm Rds(on) is specified at 15 A with 10 V on the gate. That is the fully-enhanced condition. The 6 nC total gate charge is low enough that a microcontroller GPIO with a series resistor can switch it at a few hundred kHz, but for higher frequencies a dedicated driver cleans up the switching edges.

Package and thermal reality in a DPAK

That 35 A continuous drain rating is achievable only with the tab soldered to a substantial copper pour on the PCB — without good thermal management the junction temperature will exceed the 175°C absolute maximum under sustained load.

STMicroelectronics no longer manufactures this specific order code.

Frequently asked questions

What is the Rds(on) of STD35N3LH5?

The maximum on-resistance is 16 mOhm at 15 A drain current with 10 V gate-to-source voltage. The part also supports 4.5 V gate drive, but the Rds(on) at that lower voltage will be higher than the 16 mOhm figure.

What package is STD35N3LH5?

The STD35N3LH5 comes in a DPAK package, also designated as TO-252-3, DPak (2 Leads + Tab), SC-63. It is a surface-mount package with a single tab for thermal dissipation.

What is the replacement for STD35N3LH5?

A replacement requires evaluating a 30 V, 35 A N-channel MOSFET in a DPAK package with similar Rds(on) and gate charge characteristics. The STripFET V series includes other 30 V N-channel devices in DPAK — parametric comparison against the original spec is needed to confirm a drop-in fit.