Skip to main content
STMicroelectronics STD30NF06T4 — Discrete Semiconductors

STD30NF06T4 N-Channel MOSFET, 60V 28A, 28mOhm, DPAK

MPNSTD30NF06T4
Active

STMicroelectronics STD30NF06T4, STripFET™ II series, N-channel MOSFET, 60V Vdss, 28A Id, 28mOhm Rds(on) at 10V, 58nC Qg, DPAK package, -55°C to 175°C TJ.

$1.3300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD30NF06T4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1750 pF @ 25 V

Product details

60V, 28A N-channel switch in DPAK — where this part lands in the BOM

The STMicroelectronics STD30NF06T4 is a 60V, 28A N-channel power MOSFET from the STripFET™ II generation, housed in a surface-mount DPAK (TO-252) package. It is a general-purpose switching device for DC-DC converters, motor drives, load switches, and power management in industrial and automotive-adjacent applications. The headline specs — 28 mOhm max on-resistance at 10V gate drive and a 175°C maximum junction temperature — define its conduction loss and thermal headroom in a 12V or 24V bus design.

28 mOhm at 15A — the conduction loss anchor

The 28 mOhm Rds(on) maximum at 15A drain current with a 10V gate drive sets the I²R loss for the steady-state on-period. In a 10A load, that's about 2.8W conduction loss at the FET — enough to need the DPAK tab soldered to a reasonable copper area on the PCB. The gate drive requirement is 10V for the rated on-resistance; the 4V threshold at 250 µA means the device will start conducting at logic-level voltages, but the Rds(on) will be significantly higher below 10V. This is a standard-gate-threshold part, not a logic-level FET.

A maximum gate charge of 58 nC at 10V gate voltage is moderate for a 60V, 28A device. The input capacitance is 1750 pF at 25V Vds. Together, these numbers tell the designer that a standard gate-driver IC with 1A to 2A peak source/sink capability will switch this FET in the 50–100 ns range, keeping switching losses manageable in the 50–200 kHz range. The 1750 pF input capacitance also means the gate-drive power per cycle is modest, around 0.6 µJ at 10V, so the driver's average dissipation is not a concern at typical switching frequencies.

Thermal capability and environment — 175°C junction is the differentiator

The 175°C TJ max is typical for automotive-grade power MOSFETs and suits under-hood, motor-drive, and high-ambient industrial enclosures where the junction sees sustained thermal cycling. The 70W power dissipation at case temperature (Tc) is the package limit; real-world dissipation will be lower with the DPAK on a standard FR-4 footprint.

Package and mounting — DPAK for automated assembly

The STD30NF06T4 comes in the DPAK (TO-252) surface-mount package, also designated as TO-252-3, DPak (2 Leads + Tab), SC-63. The mounting type is surface mount, so it flows through standard reflow profiles.

Frequently asked questions

What is the closest pin-compatible alternative to STD30NF06T4?

A functional equivalent would be any 60V, 28A-rated N-channel MOSFET in DPAK with similar Rds(on) and gate charge — a parametric search across ST's own STripFET™ II family or competitor parts like Infineon's OptiMOS or onsemi's DPAK portfolio would be needed to find a drop-in replacement.