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STMicroelectronics STD30NF03LT4 — Discrete Semiconductors

STD30NF03LT4 N-Channel MOSFET, 30V 30A

MPNSTD30NF03LT4
Obsolete

STMicroelectronics STripFET™ II, N-Channel MOSFET, STD30NF03LT4, 30 V, 30 A, 25 mOhm @ 15 A, 10 V, DPAK, -65°C to 175°C.

$0.5100Ref. price · indicative, final on quote
STMicroelectronics STD30NF03LT4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD30NF03LT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation50W (Tc)
Operating temperature-65°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds830 pF @ 25 V

Product details

No factory orders or last-time-buy windows are active. Any stock you find today is new-old-stock or surplus held by independent distributors. For a production BOM line, this part is no longer a viable long-term fit unless you have a secured inventory buffer. The base product number STD30N may share a die but the specific 'LT4' tape-and-reel variant is end-of-life.

At 15 A load, dissipation from channel resistance alone needs the DPAK tab soldered to a copper plane for thermal relief.

The 175°C maximum junction allows operation in high-ambient enclosures, but the 50 W power dissipation ceiling means thermal management – a good via stitch under the DPAK tab – is non-negotiable above 5 A continuous.

Frequently asked questions

Is STD30NF03LT4 obsolete?

Yes, STMicroelectronics lists the STD30NF03LT4 as obsolete. No factory production or last-time-buy is active. Sourcing is limited to surplus or broker inventory.

What is the Rds(on) of STD30NF03LT4?

The maximum on-resistance is 25 mOhm at 15 A drain current and 10 V gate-source voltage. At 4.5 V gate drive the Rds(on) will be higher – the datasheet typical curve should be consulted for the actual value.