Skip to main content
Log in
STMicroelectronics STD30NE06L — Discrete Semiconductors

STD30NE06L N-Channel MOSFET, 60V 30A STripFET, DPAK

MPNSTD30NE06L
Obsolete

STMicroelectronics STripFET™ STD30NE06L, N-Channel MOSFET, 60 V Vdss, 30 A Id, 28 mOhm Rds(on) @ 10 V, DPAK surface-mount package.

$1.5000Ref. price · indicative, final on quote
STMicroelectronics STD30NE06L datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD30NE06L specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation55W (Tc)
Operating temperature175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2370 pF @ 25 V

Product details

The gate threshold voltage is specified at 2.5 V maximum with 250 µA drain current, allowing logic-level gate drive from 5 V rails.

Total gate charge is 41 nC at 5 V gate-source voltage, and input capacitance measures 2370 pF at 25 V drain-source bias. These figures indicate the gate-drive energy per switching cycle and the capacitive load the driver sees; a 5 V gate-drive rail is sufficient to turn the device fully on, though minimum Rds(on) is achieved at 10 V drive.

Lifecycle status — obsolete, sourced on the secondary market

STMicroelectronics no longer manufactures this part in volume through primary distribution channels.

Frequently asked questions

Where can I buy STD30NE06L?

The STD30NE06L is obsolete from the manufacturer. Current pricing and stock availability are confirmed at the time of quote.

What is the equivalent or replacement for STD30NE06L?

No official replacement or cross-reference is listed by STMicroelectronics for the STD30NE06L. A replacement should match the 60 V drain-source voltage, 30 A continuous drain current, 28 mOhm maximum Rds(on) at 10 V, and DPAK package. A same-function N-channel MOSFET in the STripFET family with comparable ratings may be considered, but pin-compatibility must be verified against the DPAK footprint and gate-drive requirements.