Skip to main content
Log in
STMicroelectronics STB8N90K5

STB8N90K5 MOSFET N-Ch 900V 8A D2PAK - MDmesh K5

MPNSTB8N90K5
End of Life

STMicroelectronics MDmesh™ K5 series, STB8N90K5, N-Channel MOSFET, 900V Vdss, 8A Id, 800mOhm Rds(on) at 10V, D2PAK (TO-263) surface mount, -55°C to 150°C junction temperature.

$3.42Ref. price · indicative, final on quote
STMicroelectronics STB8N90K5 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB8N90K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs800mOhm @ 1.17A, 10V

Product details

On-resistance and gate threshold — where the efficiency budget lives

Rds(on) is specified at 800 mOhm maximum with Vgs = 10 V and Id = 1.17 A — the 10 V drive is the recommended gate voltage to fully enhance the channel; below 5 V the device is still in the linear region (Vgs(th) max is 5 V at 100 µA), so a 12 V gate rail from a bootstrap or auxiliary winding is the safe call for production. The ±30 V maximum gate-source rating gives a comfortable margin for driving the gate with a 12–15 V supply; a 15 V Zener clamp across gate-source is still good practice to protect against Miller-induced spikes during hard-switching transitions.

The device is ROHS3 compliant; no lead-free transition concerns for ongoing production. CT suits prototype or low-volume builds.

Mounting and thermal — D2PAK layout checklist

The D2PAK (TO-263) footprint has three leads plus a large exposed drain tab on the bottom.

Frequently asked questions

What is the Rds(on) of STB8N90K5 at typical operating conditions?

The maximum Rds(on) is 800 mOhm at Vgs = 10 V and Id = 1.17 A. At the full 8 A drain current, the on-resistance will be higher — expect a typical value around 1 ohm at 25 °C junction, increasing with temperature per the normalised curve in the datasheet.

Is STB8N90K5 lead-free?

Yes, the STB8N90K5 is ROHS3 compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive including the exemption for lead in high-melting-temperature solders.