STMicroelectronics STB8N65M5, MDmesh V series, N-channel MOSFET, 650 V Vdss, 7 A continuous drain, 600 mOhm Rds(on), 15 nC gate charge, D2PAK (TO-263) surface mount.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 690 pF @ 100 V |
The ±25 V maximum gate-source rating gives margin for ringing on the gate node, but a gate resistor is still needed to damp the LC tank formed by the PCB trace and the input capacitance.
ROHS3 compliant.
Maximum on-resistance is 600 mOhm at 3.5 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations at 25 °C junction; Rds(on) increases with temperature per the normalised curve in the datasheet.
The STB8N65M4 is the predecessor in the MDmesh IV family. The M5 generation typically offers lower Rds(on) and lower gate charge for the same voltage rating, improving switching efficiency. Pin-compatible in the same D2PAK footprint — a drop-in upgrade for existing layouts.