STMicroelectronics STripFET™ II STB85NF55T4, N-Channel MOSFET, 55 V Vdss, 80 A Id, 8 mOhm Rds(on) at 10 V, 150 nC Qg, D2PAK (TO-263), -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 150 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3700 pF @ 25 V |
The STB85NF55T4: Total gate charge is 150 nC at 10 V. Input capacitance is 3700 pF at 25 V drain-source.
The 300 W power dissipation at the case is a theoretical ceiling — real-world dissipation is set by the D2PAK copper footprint on the PCB and the airflow.
The part is ROHS3 compliant.