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STMicroelectronics STB85NF55LT4

STB85NF55LT4 N-Channel MOSFET, 55 V, 80 A, 8 mOhm D2PAK

MPNSTB85NF55LT4
End of Life

STMicroelectronics STripFET™ II STB85NF55LT4, N-Channel MOSFET, 55 V Vdss, 80 A continuous drain, 8 mOhm Rds(on) at 40 A, 10 V gate drive, D2PAK (TO-263-3), -55 to 175 °C.

$3.3Ref. price · indicative, final on quote
STMicroelectronics STB85NF55LT4 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB85NF55LT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds4050 pF @ 25 V

Product details

55 V, 80 A N-channel — the conduction-loss anchor

The STB85NF55LT4 is a 55 V, 80 A N-channel MOSFET from ST's STripFET™ II generation, built for switching loads where on-resistance and thermal headroom are the binding constraints.

Gate charge and drive voltage — what the 110 nC means for the driver

Total gate charge is 110 nC at 5 V gate drive.

ROHS3 compliant. The D2PAK (TO-263-3) package is a standard surface-mount power footprint with an exposed tab for thermal vias; the -55 to 175 °C junction range covers automotive under-hood and industrial motor-drive environments.

Frequently asked questions

What is the Rds(on) of STB85NF55LT4 at 40 A?

This is the typical operating point for conduction-loss calculations.