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STMicroelectronics STB80N4F6AG

STB80N4F6AG STripFET N-Channel 40V 80A MOSFET, AEC-Q101

MPNSTB80N4F6AG
End of Life

STMicroelectronics STripFET STB80N4F6AG, N-Channel MOSFET, 40V Vdss, 80A Id, 6mOhm Rds(on) at 10V, 36nC Qg, D2PAK (TO-263), -55 to 175°C, AEC-Q101.

$1.86Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB80N4F6AG specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2150 pF @ 25 V

Product details

With a maximum Rds(on) of 6 mOhm at Vgs = 10 V and Id = 40 A, the conduction loss at 40 A is under 10 W — manageable in the D2PAK package with the exposed tab soldered to a copper plane. Input capacitance is 2150 pF at Vds = 25 V — this is the load the gate driver sees during the Miller plateau.

The D2PAK (TO-263) surface-mount package has two leads plus the drain tab.

Frequently asked questions

Is STB80N4F6AG automotive qualified?

Yes, it is AEC-Q101 qualified and carries an Automotive grade designation.

What is the Rds(on) of STB80N4F6AG?

This is the spec to use for worst-case conduction loss calculations in a 12 V automotive load circuit.