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STMicroelectronics STB6N60M2

STB6N60M2 N-Channel MOSFET, 600 V, 4.5 A, D2PAK

MPNSTB6N60M2
End of Life

STMicroelectronics STB6N60M2, MDmesh II Plus N-channel MOSFET, 600 V Vdss, 4.5 A continuous drain, 1.2 Ohm Rds(on) at 10 V, 8 nC gate charge, D2PAK (TO-263) surface-mount package, -55 to 150 °C junction temperature.

$1.61Ref. price · indicative, final on quote
STMicroelectronics STB6N60M2 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB6N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.25A, 10V
Gate charge (Qg) (Max) @ vgs8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds232 pF @ 100 V

Product details

600 V N-channel MOSFET in D2PAK — switching converter fit

It is housed in a D2PAK (TO-263) surface-mount package, a standard footprint for medium-power, high-voltage switching stages in power supplies, adapters, and lighting ballasts.

On-resistance and gate charge — the switching loss trade-off

The low gate charge reduces the drive power required from the controller, a direct benefit in flyback and PFC stages operating above 65 kHz.

Thermal and input capacitance — layout and derating

Maximum power dissipation is 60 W at the case, with the junction temperature range spanning -55 to 150 °C. The input capacitance is 232 pF at 100 V drain-source, a figure that influences the drive circuit design and the switching node rise time.

It is ROHS3 compliant.

Frequently asked questions

What is the equivalent of STB6N60M2?

The STB6N60M2 is part of the MDmesh II Plus series. A direct pin-compatible replacement from the same series is the STB6N60M1, which shares the same D2PAK footprint and 600 V rating. Verify the Rds(on) and gate charge differences against your switching frequency and thermal budget before substituting.

Can STB6N60M2 replace STB6N60M1?

The STB6N60M2 and STB6N60M1 are both 600 V N-channel MOSFETs in the D2PAK package from the MDmesh II Plus series. The M2 variant has a lower typical Rds(on) and gate charge, making it a more efficient drop-in replacement in most designs. Confirm the gate drive voltage and switching frequency are compatible with the M2's 10 V drive specification.