STB6N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics STB6N60M2, MDmesh II Plus N-channel MOSFET, 600 V Vdss, 4.5 A continuous drain, 1.2 Ohm Rds(on) at 10 V, 8 nC gate charge, D2PAK (TO-263) surface-mount package, -55 to 150 °C junction temperature.

STMicroelectronics STB6N60M2
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB6N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.25A, 10V
Gate charge (Qg) (Max) @ vgs8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds232 pF @ 100 V

Technical details

600 V N-channel MOSFET in D2PAK — switching converter fit

It is housed in a D2PAK (TO-263) surface-mount package, a standard footprint for medium-power, high-voltage switching stages in power supplies, adapters, and lighting ballasts.

On-resistance and gate charge — the switching loss trade-off

The low gate charge reduces the drive power required from the controller, a direct benefit in flyback and PFC stages operating above 65 kHz.

Thermal and input capacitance — layout and derating

Maximum power dissipation is 60 W at the case, with the junction temperature range spanning -55 to 150 °C. The input capacitance is 232 pF at 100 V drain-source, a figure that influences the drive circuit design and the switching node rise time.

It is ROHS3 compliant.

STB6N60M2
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