Active N-channel power switch for 60 V rails
The STB60NF06LT4: N-channel MOSFET rated 60 V Vdss and 60 A Id with 14 mOhm max Rds(on) at 30 A, 10 V.
14 mOhm max Rds(on) at 30 A, 10 V. 110 W power dissipation rating. 66 nC gate charge at 4.5 V.
STB60NF06LT4 N-Channel MOSFET, 60 V, 60 A, D2PAK
MPNSTB60NF06LT4
End of Life
STMicroelectronics STripFET™ II STB60NF06LT4, N-Channel MOSFET, 60 V Vdss, 60 A Id, 14 mOhm Rds(on) at 30 A, 10 V, D2PAK (TO-263) surface mount, -65°C to 175°C.
$2.01Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -65°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 66 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 25 V |
Product details
Frequently asked questions
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Buyers need to verify electrical parameters like Vdss, Rds(on), and package details to ensure fit in their design.
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