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STMicroelectronics STB5N80K5

STB5N80K5 N-Channel MOSFET, 800 V, 4 A, D²Pak

MPNSTB5N80K5
End of Life

STMicroelectronics MDmesh™ STB5N80K5, N-Channel MOSFET, 800 V Vdss, 4 A continuous drain, 1.75 Ohm Rds(on) at 2 A, 10 V, D²Pak (TO-263) surface-mount package, -55°C to 150°C junction temperature.

$2.08Ref. price · indicative, final on quote
STMicroelectronics STB5N80K5 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB5N80K5 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.75Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds177 pF @ 100 V

Product details

Key ratings and what they mean for the design

The 800 V drain-source breakdown voltage provides headroom for universal-input offline converters. The 1.75 Ohm maximum on-resistance at 2 A and 10 V gate drive sets conduction loss. The 5 nC typical gate charge at 10 V keeps switching losses low. Input capacitance of 177 pF at 100 V Vds eases layout.

Lifecycle and sourcing

It is ROHS3 compliant. For current pricing and availability, submit an RFQ — the part is sourced through independent distribution and quoted to order.

Frequently asked questions

What is the Rds(on) of STB5N80K5?

The maximum on-resistance is 1.75 Ohm at 2 A drain current with 10 V gate drive.