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STMicroelectronics STB57N65M5

STB57N65M5 N-Channel 650V 42A MOSFET, MDmesh V, D2PAK

MPNSTB57N65M5
End of Life

STMicroelectronics MDmesh V series, STB57N65M5, N-Channel MOSFET, 650 V Vdss, 42 A Id, 63 mOhm Rds(on) at 10 V, D²Pak (TO-263) surface mount, 150°C junction temperature.

$11.87Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB57N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation250W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs63mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4200 pF @ 100 V

Product details

650 V, 42 A — the switching transistor for offline power

The STB57N65M5: The 650 V rating provides headroom above the nominal rail in single-switch flyback and PFC stages. The 250 W maximum power rating at the case means the thermal interface to the heatsink is the real limiter.

Total gate charge is 98 nC at 10 V. Input capacitance is 4200 pF at 100 V drain-source.

D²Pak — board-level thermal management

The D²Pak (TO-263) surface-mount package puts the exposed drain tab on the bottom. The 150°C absolute maximum junction temperature leaves margin for transient overloads.

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