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STMicroelectronics STB46N30M5

STB46N30M5 N-Channel MOSFET, 300 V, 53 A, D2PAK, AEC-Q101

MPNSTB46N30M5
End of Life

STMicroelectronics MDmesh V N-channel MOSFET, 300 Vdss, 53 A continuous drain, 40 mOhm Rds(on) at 10 V, D2PAK (TO-263), AEC-Q101 qualified, active production.

$9.06Ref. price · indicative, final on quote
STMicroelectronics STB46N30M5 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB46N30M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C53A (Tc)
Power dissipation250W (Tc)
Operating temperature150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 26.5A, 10V
Gate charge (Qg) (Max) @ vgs95 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4240 pF @ 100 V

Product details

300 V, 53 A N-channel MDmesh V — the automotive power switch

The STB46N30M5: AEC-Q101 qualification confirms this part is characterised and screened for automotive stress profiles.

Gate charge and switching — 95 nC at 10 V

The ±25 V Vgs max gives headroom for gate-drive overshoot in noisy automotive rails.

Package and thermal — D2PAK with 250 W dissipation ceiling

Surface-mount D2PAK (TO-263) with the tab as the drain connection.

Frequently asked questions

Is STB46N30M5 obsolete or still active?

No official replacement or successor part has been issued.