STMicroelectronics MDmesh™ V, STB45N65M5, N-Channel MOSFET, 650 V Vdss, 35 A Id, 78 mOhm Rds(on) at 10 V, D²PAK (TO-263), 150°C TJ.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 210W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 78mOhm @ 19.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 91 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3375 pF @ 100 V |
The STB45N65M5: The 91 nC total gate charge at 10 V and 3375 pF input capacitance at 100 V Vds define the switching energy per cycle.
The STB45N65M5 comes in a D²PAK (TO-263) surface-mount package with the tab as the drain terminal.
ROHS3 compliant. No official second-source or successor cross-reference is listed, so the BOM line is single-sourced to ST.
This is the spec to use for conduction loss calculations in the thermal design.