STMicroelectronics MDmesh™ M5 N-Channel MOSFET, 300 V Vdss, 53 A continuous drain, 40 mOhm Rds(on) at 10 V gate drive, 95 nC gate charge, TO-263-3 (D²Pak) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 300 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 53A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 26.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 95 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4240 pF @ 100 V |
Housed in the TO-263-3 (D²Pak) surface-mount package, the STB45N30M5 dissipates up to 250 W at the case.
The wide temperature margin allows derating for reliability in long-life designs.
The junction temperature range is -55°C to 150°C. This is the operating junction temperature, not the ambient — derating applies based on power dissipation and thermal resistance.
Yes, the STB45N30M5 is ROHS3 compliant, meaning it meets the current European Union directive on restriction of hazardous substances for lead-free soldering processes.
The STB45N30M5 is from the same MDmesh M5 family as the STB45N30M4 and shares the same TO-263 package and 300 V rating. The key difference is Rds(on): the M5 variant offers a lower 40 mOhm maximum versus the M4's higher on-resistance. If your design relies on the M4's specific switching characteristics or gate charge, verify the M5's 95 nC Qg against your driver's capability before substitution.