Gate charge and switching speed
The STB42N65M5: Total gate charge is 100 nC at 10 V, with an input capacitance of 4650 pF at 100 V drain.
No last-time-buy or end-of-life notice has been issued.
STB42N65M5
STMicroelectronics · MDmesh™ V Series
STMicroelectronics MDmesh V N-Channel MOSFET, 650 V Vdss, 33 A continuous drain, 79 mOhm Rds(on) at 10 V, D2PAK (TO-263) surface mount.
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 79mOhm @ 16.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4650 pF @ 100 V |
Technical details
STB42N65M5
[ALLOC] verified