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STMicroelectronics STB34NM60ND

STMicroelectronics STB34NM60ND

MPNSTB34NM60ND
End of Life

MOSFET N-CH 600V 29A D2PAK

$10.92Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesFDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB34NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C29A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 14.5A, 10V
Gate charge (Qg) (Max) @ vgs80.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2785 pF @ 50 V