STB34NM60ND
STMicroelectronics · FDmesh™ II Series
MOSFET N-CH 600V 29A D2PAK
[IN STOCK] In Stock: 461 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 14.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2785 pF @ 50 V |
STB34NM60ND
[ALLOC] verified