600V, 25A, 128mOhm — the switching FET for a PFC or resonant converter
The STB33N60DM6 is an N-channel power MOSFET from ST's MDmesh™ M6 series, rated for 600 V drain-source breakdown and 25 A continuous drain current at 25°C case temperature. The on-resistance is 128 mOhm maximum at 12.5 A with a 10 V gate drive — the number that sets conduction losses in a hard-switched topology. Gate charge is 35 nC at 10 V, which keeps the gate-drive energy per cycle low enough that a standard bootstrap driver can handle it without excessive dissipation. Input capacitance at 100 V drain bias is 1500 pF, a figure that influences the switching transition time and the driver's peak current requirement. The part lives in a D2PAK (TO-263) surface-mount package with an exposed tab. That tab is the drain connection and must be soldered to a copper island on the PCB for thermal management — the package is rated for 190 W power dissipation at case temperature 25°C. The junction temperature range spans -55°C to 150°C, so it can sit in a hot industrial cabinet or an outdoor telecom rectifier without derating surprises.
What the gate charge and capacitance mean at the bench
A 35 nC total gate charge at 10 V means the driver needs to source and sink about 35 nC per switching cycle. The 1500 pF input capacitance at 100 V drain bias is the Ciss the driver sees during the Miller plateau.
Lifecycle and sourcing — active, no LTB watch
The STB33N60DM6 carries an Active product status and is ROHS3 compliant. There is no end-of-life notice or last-time-buy window to track. No second-source alternate is listed in the official record, but the D2PAK footprint is common across the MDmesh M6 family, so a pin-compatible density step (higher or lower Rds(on)) is a board-level option if the BOM needs flexibility.