STB30NF10T4

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II N-Channel MOSFET, STB30NF10T4, 100V Vdss, 35A Id, 45mOhm Rds(on), 55nC Qg, D2PAK (TO-263), -55°C to 175°C.

STMicroelectronics STB30NF10T4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB30NF10T4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation115W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1180 pF @ 25 V

Technical details

100V, 35A N-channel in D2PAK

The STB30NF10T4: On-resistance is 45 mOhm maximum at 15 A drain current with a 10 V gate drive — this is the figure to use for conduction loss calculations in a synchronous rectifier or motor-drive output stage. Gate charge totals 55 nC at 10 V, so the driver must supply roughly 5.5 mA per 100 kHz of switching frequency just to charge the gate capacitance; the actual switching loss scales with the Qg × Vgs × fsw product.

Gate threshold and drive voltage

Input capacitance is 1180 pF typical at 25 V drain-source, which together with the gate charge sets the switching speed ceiling; the Miller plateau region is where the gate driver spends most of its time during the switching transition.

ROHS3 compliant per the manufacturer's declaration, with no lead, mercury, cadmium, or restricted phthalates in the package materials.

STB30NF10T4
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