STMicroelectronics MDmesh K5 series, STB30N80K5, N-Channel MOSFET, 800 V Vdss, 24 A continuous drain, 180 mOhm Rds(on) at 12 A, 10 V, 43 nC gate charge, D2PAK (TO-263), -55°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 43 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1530 pF @ 100 V |
The STB30N80K5: Gate charge totals 43 nC at 10 V. Input capacitance is 1530 pF at 100 V drain bias. The D2PAK (TO-263) copper tab area on the PCB sets the effective thermal resistance.
Surface-mount D2PAK (TO-263) with three leads and a tab. The ±30 V maximum gate-source rating leaves headroom for 10 V gate drive rails without external clamping.
ROHS3 compliant.
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Thermal capability is key for reliability in harsh environments.